Heteroepitaxial ZnO nano hexagons on p-type SiC
نویسندگان
چکیده
منابع مشابه
Vertically Grown p–Type ZnO Nanorod on Ag Thin Film
A Silver (Ag) thin film is introduced as a template and doping source for vertically aligned p–type ZnO nanorods. ZnO nanorods were grown using an ammonium hydroxide based hydrothermal process. During the hydrothermal process, the Ag thin film was dissolved to generate Ag ions in the solution. The Ag ions can contribute to doping in the wurzite structure of ZnO and the (111) grain of Ag thin fi...
متن کاملNa-doped p-type ZnO microwires.
p-Type ZnO microwires were first synthesized by a simple chemical vapor deposition method using Na as the dopant source. p-Type doping was confirmed by the electrical transport in single-wire field-effect transistors and low-temperature photoluminescence. The carrier mobility of the microwires was estimated to be approximately 2.1 cm(2) V(-1) S(-1).
متن کاملStress nature investigation on heteroepitaxial 3C–SiC film on (100) Si substrates
Alex A. Volinsky Department of Mechanical Engineering, University of South Florida Tampa, Florida 33620 Stephen E. Saddow Department of Electrical Engineering, University of South Florida, Tampa, Florida 33620; and Department of Molecular Pharmacology and Physiology, University of South Florida, Tampa, Florida 33620 Francesco La Via IMM-CNR, sezione di Catania, Stradale Primosole 50, 95121, Cat...
متن کاملStrain effects in ZnO layers deposited on 6H-SiC
Correlation in crystallite sizes and defects of epitaxial ZnO layers deposited on 6H-SiC substrates has been addressed. The biaxial strain governs the ZnO crystallites for the layer thickness of 400 nm. The misfit dislocations were observed in nucleation and theater is the columnar growth mode diffracted in transmission electron microscopy. The columnar growth mode is a symbol of stacking fault...
متن کاملPiezoresistance behaviors of p-type 6H-SiC nanowires.
We reported, for the first time, the piezoresistance behaviors of single p-type 6H-SiC nanowires. The results suggest that present p-type 6H-SiC nanowires could be an excellent candidate for the fabrication of robust and reliable stress sensors.
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Crystal Growth
سال: 2010
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2009.09.057